Formation and Properties of Quasi-Crystalline Films on the Surface of Crystals Under Irradiation with Proton–Ion Fluxes

Purpose of research. The study of the features of the formation of quasicrystalline films and the conditions for the formation of quantum dots in their structure as electromagnetic traps for electrons or protons.

Methods. A method of modeling the structure of clusters in the approximation of absolutely hard spheres on the principles of close packing of particles and the rule of the "golden section" is applied.

Results. It is shown that in the structure of quasicrystalline films, the formation of quantum dots is possible, which are potential wells of various shapes with quantized motion of an electron or proton. In the case of an electron in a potential well, such a well becomes a source of electromagnetic radiation in the ultraviolet region of the spectrum; in the case of a proton in a potential well, the radiation of a quantum dot is in the infrared region of the spectrum.

Conclusion. When a crystal surface is irradiated with proton-ion fluxes with a certain ratio of the diameters of the atoms of the irradiated metal and the ions of the irradiating flux, a quasicrystalline film with a densest packing of atoms can form on the crystal surface. In the structure of the quasicrystalline film, atom-free regions of the order of 1 Å in size are formed, which are traps for protons from the irradiating flux, so a quantum dot appears.

The atomic packing of a quasicrystalline film is a packing of equilateral Penrose rhombuses at the vertices of which are the centers of mass of atoms.

A mathematical relation is obtained that allows one to predict the radii of the ions of the irradiating flow for the formation of a quasicrystalline film and to choose the atomic composition of the resulting film with predetermined properties.

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