Kinetics of Formation of Langmuir Films from Stabilized Quantum Dots CdSe / CdS / ZnS

Purpose of research. Form a film structure from stabilized CdSe/CdS/ZnS quantum dots by the Langmuir – Blodgett method and comprehensively characterize it using modern nanoinstrumental methods.

Methods. Determination of surface morphology by atomic force microscopy; chemical structure by Raman scattering of light; the size of CdSe/CdS/ZnS quantum dots, including by the method of small-angle X-ray scattering.

Results. A family of compression isotherms of Langmuir monolayers is obtained on a colloidal system of CdSe / CdS / ZnS quantum dots stabilized by trioctylphosphine and its oxide. From the analysis of isotherms, rational parameters of the formation of a Langmuir film and its transfer to a solid substrate have been established. It is found that the control parameters of the formation of quantum dots in a Langmuir film are the temperature of the water subphase and the surface concentration of quantum dots. The decisive role in the deposition of the film is assigned to the speed of the dipper movement.

Atomic force microscopy revealed its regularity in the film structure, and determined the lateral size of the aggregates of stabilized quantum dots (about 50 nm). Longitudinal optical phonon modes characteristic of CdSe/CdS/ZnS have been detected by the method of Raman light scattering.

A theoretical calculation of the position of Langmuir barriers is carried out when a monolayer structure with a hexagonal close packing of quantum dots is formed between them.

Conclusion. The Langmuir – Blodgett method, which allows the formation of quantum dots into film structures, acts as an alternative, for example, to eleonic methods, differing in automation, repeatability and unpretentiousness to environmental conditions. Using the method of atomic force microscopy, it is possible to establish a rational regime for the formation of Langmuir films with their subsequent complex characterization.

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