techusguИзвестия Юго-Западного государственного университета. Серия: Техника и технологииProceedings of the Southwest State University. Series: Engineering and Technology2223-1528Юго-Западный государственный университет10.21869/2223-1528-2022-12-1-99-117techusgu-67Research ArticleФИЗИКАPHYSICSФотолюминесценция нанокристаллов ZnSxSe1-x и ZnSxSe1-x:Mn, полученных методом самораспространяющегося высокотемпературного синтезаPhotoluminescence of ZnSxSe1-x and ZnSxSe1-x:Mn Nanocrystals Obtained by Combustion Synthesishttps://orcid.org/0000-0003-3805-5026ПлахтийЕ. Г.PlakhtiiE. G.

Плахтий Евгений Георгиевич, соискатель кафедры теоретической и экспериментальной физики института инженерных и цифровых технологий

ул. Победы 85, г. Белгород 308015

Evgenii G. Plakhtii, Applicante of the Department of Theoretical and Experimental Physics  of the Institute of Engineering and Digital  Technologies

85 Pobeda str., Belgorod 308015

plakhtii.ev@gmail.comhttps://orcid.org/0000-0001-7055-8243ЗахвалинскийВ. С.ZakhvalinskyV. S.

Захвалинский Василий Сергеевич, доктор физико-математических наук, профессор,   профессор кафедры теоретической  и экспериментальной физики института  инженерных и цифровых технологий

ул. Победы 85, г. Белгород 308015

Vasily S. Zakhvalinsky, Dr. of Sci. (Physics  and Mathematics), Professor, Professor of  the Department of Theoretical and Experimental Physics of the Institute of Engineering and Digital Technologies

85 Pobeda str., Belgorod 308015

zakhvalinskii@bsu.edu.ruБочаровИ. В.BocharovI. V.

Бочаров Иван Вячеславович, аспирант  кафедры теоретической и экспериментальной физики института инженерных и цифровых технологий

ул. Победы 85, г. Белгород 308015

Ivan V. Bocharov, Post-Graduate Student  of the Department of Theoretical and  Experimental Physics of the Institute  of Engineering and Digital Technologies

85 Pobeda str., Belgorod 308015

992282@bsu.edu.ruБелгородский государственный национальный исследовательский университетРоссияBelgorod State National Research UniversityRussian Federation20222804202312199117Copyright © Плахтий Е.Г., Захвалинский В.С., Бочаров И.В., 20232023Плахтий Е.Г., Захвалинский В.С., Бочаров И.В.Plakhtii E.G., Zakhvalinsky V.S., Bocharov I.V.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://techusgu.elpub.ru/jour/article/view/67Цель исследования

Цель исследования. Исследование спектров фотолюминесценции нанокристаллов ZnSxSe1-x и ZnSxSe1-x : Mn и определение параметров индивидуальных полос излучения нанокристаллов ZnSxSe1-x:Mn, полученных методом самораспространяющегося высокотемпературного синтеза.

Методы

Методы. Характеризация нанокристаллов ZnSxSe1-x и ZnSxSe1-x: Mn с помощью фотолюминесцентной спектроскопии. Извлечение параметров индивидуальных полос благодаря методике, основанной на методе Тихонова и методе производной спектроскопии.

Результаты

Результаты. Зарегистрированы спектры фотолюминесценции нанокристаллов ZnSxSe1-x и ZnSxSe1-x:Mn для всех составов с шагом параметра х = 0,2. Построены зависимости положения максимума и полуширины спектров фотолюминесценции в нанокристаллах ZnSxSe1-x и ZnSxSe1-x:Mn от значения параметра х. Отмечено движение максимума интегрального спектра фотолюминесценции в нанокристаллах ZnSxSe1-x и ZnSxSe1-x:Mn в сторону больших энергий в зависимости от параметра х. Замечено, что в диапазоне значений x = 0,2…0,4 происходит резкое изменение полуширины интегрального спектра фотолюминесценции в нанокристаллах ZnSxSe1-x и ZnSxSe1-x:Mn и интенсивности сигнала, это может быть связано с перестройкой кристаллической решетки. Определены параметры индивидуальных спектров фотолюминесценции нанокристаллов ZnSxSe1-x:Mn по единственному экспериментальному измерению. Обсуждается природа индивидуальных полос фотолюминесценции.

Заключение

Заключение. Полученные результаты зависимостей можно объяснить изменением ширины запрещенной зоны нанокристаллов ZnSxSe1-x и ZnSxSe1-x:Mn, а также перераспределением интенсивностей индивидуальных полос. Отличие интегрального (сумма индивидуальных полос) и экспериментального спектра возникает из-за наличия в экспериментальном спектре дополнительной индивидуальной полосы малой интенсивности. Данная индивидуальная полоса расположена в районе Е = 2,48 эВ и связана с электронными переходами в ионах Mn2+ в решетке ZnS.

Purpose

Purpose. Investigation of the photoluminescence spectra of ZnSxSe1-x and ZnSxSe1-x:Mn nanocrystals and determination of the parameters of individual emission bands of ZnSxSe1-x:Mn nanocrystals obtained by combustion synthesis.

Methods

Methods. Characterization of ZnSxSe1-x and ZnSxSe1-x:Mn nanocrystals using photoluminescence spectroscopy.  Extraction of the parameters of individual bands due to a method based on the Tikhonov method and the derivative spectroscopy method.

Results

Results. here is an abrupt change in the half-width of the integral photoluminescence spectrum in ZnSxSe1-x and ZnSxSe1-x: Mn nanocrystals and the signal intensity; this may be due to the crystal lattice transformation. We determined the parameters of individual photoluminescence spectra ZnSxSe1-x:Mn nanocrystals according to a single experimental measurement. The nature of the individual photoluminescence bands is discussed.

Conclusion

Conclusion. The obtained results of the dependencies can be explained by the change in the band gap of the ZnSxSe1-x and ZnSxSe1-x:Mn nanocrystals, as well as by the redistribution of the intensities of the individual bands. The difference between the integral (sum of individual bands) and experimental spectrum arises from the presence of an additional individual band of low intensity in the experimental spectrum. This individual band is located in the region of  E = 2.48 eV and is associated with the electronic transitions in Mn2+ ions in the ZnS lattice.

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The authors declare that there are no conflicts of interest present.