<?xml version="1.0" encoding="UTF-8"?>
<!DOCTYPE article PUBLIC "-//NLM//DTD JATS (Z39.96) Journal Publishing DTD v1.3 20210610//EN" "JATS-journalpublishing1-3.dtd">
<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">techusgu</journal-id><journal-title-group><journal-title xml:lang="ru">Известия Юго-Западного государственного университета. Серия: Техника и технологии</journal-title><trans-title-group xml:lang="en"><trans-title>Proceedings of the Southwest State University. Series: Engineering and Technology</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2223-1528</issn><publisher><publisher-name>Юго-Западный государственный университет</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.21869/9/2223-1528-2026-16-2-90-104</article-id><article-id custom-type="elpub" pub-id-type="custom">techusgu-430</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ФИЗИКА</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>PHYSICS</subject></subj-group></article-categories><title-group><article-title>Морфология магнетронных нанопленок из h-BN</article-title><trans-title-group xml:lang="en"><trans-title>Morphology of magnetron nanofilms from h-Boron nitride</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-7089-0692</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Кузьменко</surname><given-names>А. П.</given-names></name><name name-style="western" xml:lang="en"><surname>Kuzmenko</surname><given-names>A. P.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Кузьменко Александр Павлович, доктор физико-математических наук, профессор, главный научный сотрудник Регионального центра нанотехнологий</p><p>ул. 50 лет Октября, д. 94, г. Курск 305040</p></bio><bio xml:lang="en"><p>Aleksander P. Kuzmenko, Dr. Sci. (Physics and Mathematics), Professor, Chief Researcher of the Regional Center of Nanotechnology</p><p>50 Let Oktyabrya Str. 94, Kursk 305040</p></bio><email xlink:type="simple">apk3527@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-1893-1941</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Родионов</surname><given-names>В. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Rodionov</surname><given-names>V. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Родионов Владимир Викторович, кандидат физико-математических наук, старший научный сотрудник Регионального центра нанотехнологий</p><p>ул. 50 лет Октября, д. 94, г. Курск 305040</p></bio><bio xml:lang="en"><p>Vladimir V. Rodionov, Cand. Sci. (Physics and Mathematics), Senior Researcher of the Regional Center of Nanotechnology</p><p>50 Let Oktyabrya Str. 94, Kursk 305040</p></bio><email xlink:type="simple">vovarodionov2009@yandex.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0009-0004-8571-8544</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Колпаков</surname><given-names>А. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Kolpakov</surname><given-names>A. I.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Колпаков Артём Игоревич, аспирант</p><p>ул. 50 лет Октября, д. 94, г. Курск 305040</p></bio><bio xml:lang="en"><p>Artem I. Kolpakov, Postgraduate Student</p><p>50 Let Oktyabrya Str. 94, Kursk 305040</p></bio><email xlink:type="simple">artem.kolpakov.96@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0009-0004-7401-7099</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Орлов</surname><given-names>Е. Ю.</given-names></name><name name-style="western" xml:lang="en"><surname>Orlov</surname><given-names>E. Yu.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Орлов Евгений Юрьевич, аспирант</p><p>ул. 50 лет Октября, д. 94, г. Курск 305040</p></bio><bio xml:lang="en"><p>Evgeniy Yu. Orlov, Postgraduate Student</p><p>50 Let Oktyabrya Str. 94, Kursk 305040</p></bio><email xlink:type="simple">orlov.eugene@bk.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Паньков</surname><given-names>А. Д.</given-names></name><name name-style="western" xml:lang="en"><surname>Pankov</surname><given-names>A. D.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Паньков Александр Дмитриевич, студент кафедры нанотехнологий, микроэлектроники, общей и прикладной физики</p><p>ул. 50 лет Октября, д. 94, г. Курск 305040</p></bio><bio xml:lang="en"><p>Aleksandr D. Pankov , Student of the Nanotechnology, Microelectronics, General and Applied Physics Department</p><p>50 Let Oktyabrya Str. 94, Kursk 305040</p></bio><email xlink:type="simple">alekxpank26041986@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-5004-0823</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Пугачевский</surname><given-names>М. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Pugachevsky</surname><given-names>M. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Пугачевский Максим Александрович, доктор физико-математических наук, ведущий научный сотрудник лаборатории нанооптики и плазмоники Центра фотоники и двумерных материалов</p><p>ул. Керченская, д.1 А/1, г. Москва 117303</p></bio><bio xml:lang="en"><p>Maksim A. Pugachevskii, Dr. Sci. (Physics and Mathematics), Leading Research of the Laboratory of Nano-Optics and Plasmonics of Center for Photonics and Two-Dimensional Materials</p><p>1А/1 Kerchenskaya Str., Moscow 117303</p></bio><email xlink:type="simple">pmaximal@mail.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Сюй</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Suyu</surname><given-names>A. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Сюй Александр Вячеславович, доктор физико-математических наук, главный научный сотрудник лаборатории нанооптики и плазмоники Центра фотоники и двумерных материалов</p><p>ул. Керченская, д.1 А/1, г. Москва 117303</p></bio><bio xml:lang="en"><p>Alexander V. Suyu, Dr. Sci. (Physics and Mathematics), Chief Researcher of the Laboratory of Nano-Optics and Plasmonics, Center for Photonics and Two-Dimensional Materials</p><p>1А/1 Kerchenskaya Str., Moscow 117303</p></bio><email xlink:type="simple">alsyuy271@gmail.com</email><xref ref-type="aff" rid="aff-2"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Юго-Западный государственный университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Southwest State University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Московский физико-технический институт (национальный исследовательский университет)</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Moscow Institute of Physics and Technology (National Research University)</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2026</year></pub-date><pub-date pub-type="epub"><day>08</day><month>08</month><year>2026</year></pub-date><volume>16</volume><issue>2</issue><fpage>90</fpage><lpage>104</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Кузьменко А.П., Родионов В.В., Колпаков А.И., Орлов Е.Ю., Паньков А.Д., Пугачевский М.А., Сюй А.В., 2026</copyright-statement><copyright-year>2026</copyright-year><copyright-holder xml:lang="ru">Кузьменко А.П., Родионов В.В., Колпаков А.И., Орлов Е.Ю., Паньков А.Д., Пугачевский М.А., Сюй А.В.</copyright-holder><copyright-holder xml:lang="en">Kuzmenko A.P., Rodionov V.V., Kolpakov A.I., Orlov E.Y., Pankov A.D., Pugachevsky M.A., Suyu A.V.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://techusgu.elpub.ru/jour/article/view/430">https://techusgu.elpub.ru/jour/article/view/430</self-uri><abstract><p>Цель – характеризация нанопленок BN из мишени h-BN, формируемых методом реактивного высокочастотного магнетронного распыления в смеси Ar + N2 на различных подложках.</p><sec><title>Методы</title><p>Методы. Реактивное высокочастотное магнетронное распыление нитрида бора на подложки из плавленного кварца, кремния, сапфира, ситалла, поликора и полиамидных тканей осуществлялось в зависимости от изменений управляющих параметров распыления (мощность 50 – 80 Вт и время 1800 – 2700 с, температура твердотельных подложек ~ 430 К). Магнетронные нанопленки изучены методами атомно-силовой микроскопии, сканирующей и просвечивающей (включая режим высокого разрешения) электронной микроскопии, микрорентгеноспектрального энергодисперсионного анализа, рентгенофазового анализа, комбинационного (рамановского) рассеяния света, инфракрасной Фурье-спектроскопии, спектрофотометрии оптического поглощения. Выполнено моделирование оптических характеристик в рамках теории функционала плотности в приближении рандомизированных фаз.</p></sec><sec><title>Результаты</title><p>Результаты. Прецизионно изучены особенности наноструктурирования и измерены характерные размеры наноструктур в формируемых МНП из нитрида бора, по данным ЭДА подтверждена стехиометричность элементного состава МНП на всех подложках, по цветности отраженного света установлена линейность роста толщины в зависимости от мощности и времени магнетронного распыления. По данным КРС и РФА установлено, что в процессе РВЧ МР BN формируются поликристаллические МНП, с включениями гексагонального h-BN и кубического c-BN и свободного бора, кристалличность h-BN, в МНП возрастает с ростом температуры подложки начиная с Tп ~ 600 К. Проведенные модельные расчеты оптических характеристик согласуются с спектрофотометрическими измерениями коэффициента поглощения и подтверждают полиморфизм МНП.</p></sec><sec><title>Заключение</title><p>Заключение. Комплексная характеризация магнетронных нанопленок из мишени h-BN на подложках из кремния, сапфира, ситала, поликора и полиамидных тканей, формируемых методом РВЧ МР, показала, что на процессы их наноструктурирования и фазовый состав наиболее существенно влияет Tп.</p></sec></abstract><trans-abstract xml:lang="en"><p>Purpose – to characterize BN nanofilms from an h-BN target formed by reactive high-frequency magnetron sputtering in an Ar + N2 mixture on various substrates.</p><sec><title>Methods</title><p>Methods. Reactive high-frequency magnetron sputtering of boron nitride onto silicon, sapphire, glass-ceramic, polycor, and polyamide fabric substrates was performed using varying sputtering parameters (power 50–80 W, time 1800–2700 s, and solid-state substrate temperature ~ 430 K). Magnetron nanofilms were studied using atomic force microscopy, scanning and transmission electron microscopy (including high-resolution mode), energy-dispersive X-ray microanalysis, X-ray diffraction, Raman scattering, Fourier transform infrared spectroscopy, and optical absorption spectrophotometry. Modeling of the optical characteristics was performed using density functional theory in the randomized phase approximation.</p></sec><sec><title>Results</title><p>Results. The nanostructuring features were precisely studied and the characteristic dimensions of the nanostructures in the formed boron nitride MNPs were measured using. The EDA data confirmed the stoichiometry of the elemental composition of the MNPs on all substrates, and the linearity of the thickness increase depending on the magnetron sputtering time was established based on the color of the reflected light. Raman and x-ray diffraction data showed that polycrystalline MNPs with inclusions of hexagonal h-BN and cubic c-BN and free boron are formed during the RF MR of BN. The crystallinity of h-BN in the MNPs increases with increasing substrate temperature starting from Tп ~ 600 K. Model calculations of the optical characteristics are consistent with spectrophotometric measurements of the absorption coefficient and confirm the polymorphizm in the MNPs.</p></sec><sec><title>Conclusion</title><p>Conclusion. A comprehensive characterization of boron nitride nanoparticles from an h-BN target of a silicon, sapphire, glass-ceramic, polycor, and polyamide fabric substrates formed by the RF magnetron sputtering method revealed that the sputtering temperature and time have the most significant impact on their nanostructuring and phase composition.</p></sec></trans-abstract><kwd-group xml:lang="ru"><kwd>нитрид бора</kwd><kwd>реактивное высокочастотное магнетронное распыление</kwd><kwd>магнетронные нанопленки</kwd><kwd>наноструктурирование</kwd></kwd-group><kwd-group xml:lang="en"><kwd>Boron nitride</kwd><kwd>reactive high-frequency magnetron sputtering</kwd><kwd>magnetron nanofilms</kwd><kwd>nanostructuring</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Исследование выполнено при финансовой поддержке Министерства образования и науки РФ г/з № FENM2025-0008.</funding-statement><funding-statement xml:lang="en">This study was supported by the Ministry of Education and Science of the Russian Federation, State Contract No. FENM2025-0008.</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Sami M. Ibn Shamsah. Thermoelectric materials: a scientometric analysis of recent advancements and future research directions // Energies. 2024. Vol. 17, no. 19. P. 5002. https://doi.org/10.3390/en17195002.</mixed-citation><mixed-citation xml:lang="en">Sami M. Ibn Shamsah. Thermoelectric materials: a scientometric analysis of recent advancements and future research directions. Energies. 2024;17(19):5002. https://doi.org/10.3390/en17195002.</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Emerging applications of elemental 2D materials / N.R. Glavin, R. Rao, V. Varshney, E. Bianco, A. Apte, A. Roy [et al.] // Advanced materials. 2019. Vol. 32, no. 7. P. 1904302. https://doi.org/10.1002/adma.201904302.</mixed-citation><mixed-citation xml:lang="en">Glavin N.R., R Rao., Varshney V., Bianco E., Apte A., Roy A., et al. Emerging applications of elemental 2D materials. Advanced materials. 2019;32(7):1904302. https://doi.org/10.1002/adma.201904302.</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">Shams S., Bindhu B. Recent advancements in hybrid two dimensional materials for energy applications // ES energy and environment. 2024. Vol. 24. P. 1160. https://doi.org/10.30919/esee1160.</mixed-citation><mixed-citation xml:lang="en">Shamsiya S., Bindhu B. Recent advancements in hybrid two dimensional materials for energy applications. ES energy and environment. 2024;24:1160. https://doi.org/10.30919/esee1160.</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">Boron nitride memristors: from mechanism and device optimization to integrated applications / X. Chen, T.-T. Guo, X. Chen, H.-W. Tao, S.-H. Niu, X.-F. Song [et al.] // Nanoscale. 2025. Vol. 17. P. 24830-24859. https://doi.org/10.1039/D5NR03494A.</mixed-citation><mixed-citation xml:lang="en">Chen X., Guo T.-T., Chen X., Tao H.-W., Niu S.-H., Song X.-F., et al. Boron nitride memristors: from mechanism and device optimization to integrated applications. Nanoscale. 2025;17:24830-24859. https://doi.org/10.1039/D5NR03494A.</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">Laturia A., Van de Put M.L., Vandenberghe W.G. Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk // npj 2D Materials and Applications. 2018. Vol. 2, no. 1. P. 6. https://doi.org/10.1038/s41699-018-0050-x.</mixed-citation><mixed-citation xml:lang="en">Laturia A., Van de Put M. L., Vandenberghe W.G. Dielectric properties of hexagonal Boron nitride and transition metal dichalcogenides: from monolayer to bulk. npj 2D Materials and Applications. 2018;2(1):6. https://doi.org/10.1038/s41699-018-0050-x.</mixed-citation></citation-alternatives></ref><ref id="cit6"><label>6</label><citation-alternatives><mixed-citation xml:lang="ru">Ultralow-dielectric-constant amorphous Boron nitride / S. Hong, C.-S. Lee, M.-H. Lee, Y. Lee, K.Y. Ma, G. Kim [et al.] // Nature. 2020. Vol. 582. P. 511-514. https://doi.org/10.1038/s41586-020-2375-9.</mixed-citation><mixed-citation xml:lang="en">Hong S., Lee C.-S., Lee M.-H., Lee Y., Ma K. Y., Kim G., et al. Ultralow-dielectric-constant amorphous Boron nitride. Nature. 2020;582:511-514. https://doi.org/10.1038/s41586-020-2375-9.</mixed-citation></citation-alternatives></ref><ref id="cit7"><label>7</label><citation-alternatives><mixed-citation xml:lang="ru">Hexagonal Boron nitride for next-generation photonics and electronics / S. Moon, J. Kim, J. Park, S. Im, J. Kim, I. Hwang [et al.] // Advanced Materials. 2023. Vol. 35, no. 4. P. 2204161. https://doi.org/10.1002/adma.202204161.</mixed-citation><mixed-citation xml:lang="en">Moon S., Kim J., Park J., Im S., Kim J., Hwang I., et al. Hexagonal Boron nitride for next-generation photonics and electronics. Advanced Materials. 2023;35(4):2204161. https://doi.org/10.1002/adma.202204161.</mixed-citation></citation-alternatives></ref><ref id="cit8"><label>8</label><citation-alternatives><mixed-citation xml:lang="ru">Naclerio A.E., Kidambi P.R. A review of scalable hexagonal Boron nitride (h-BN) synthesis for present and future applications // Advanced Materials. 2023. Vol. 35, no. 6. P. 2207374. https://doi.org/10.1002/adma.202207374.</mixed-citation><mixed-citation xml:lang="en">Naclerio A.E., Kidambi P.R. A review of scalable hexagonal Boron NITRIDE (h-BN) synthesis for present and future applications. Advanced Materials. 2023;35(6):2207374. https://doi.org/10.1002/adma.202207374.</mixed-citation></citation-alternatives></ref><ref id="cit9"><label>9</label><citation-alternatives><mixed-citation xml:lang="ru">Outstanding thermal conductivity of single atomic layer isotope-modified Boron nitride / Q. Cai, D. Scullion, W. Gan, A. Falin, P. Cizek, S. Liu [et al.] // Physical Review Letters. 2020. Vol. 125. P. 085902. https://doi.org/10.1103/PhysRevLett.125.085902.</mixed-citation><mixed-citation xml:lang="en">Cai Q., Scullion D., Gan W., Falin A., Cizek P., Liu S., et al. Physical Review Letters. 2020;125:085902. https://doi.org/10.1103/PhysRevLett.125.085902.</mixed-citation></citation-alternatives></ref><ref id="cit10"><label>10</label><citation-alternatives><mixed-citation xml:lang="ru">Thermal transport properties of Boron nitride based materials: a review / V. Sharma, H.L. Kagdada, Pr. K. Jha, P. Śpiewak, K.J. Kurzydłowski // Renewable and sustainable energy reviews. 2020. Vol. 120. P. 109622. https://doi.org/10.1016/j.rser.2019.109622.</mixed-citation><mixed-citation xml:lang="en">Sharma V., Kagdada H.L., Jha P.K., Śpiewak P., Kurzydłowski K.J. Thermal transport properties of Boron nitride based materials: a review. Renewable and sustainable energy reviews. 2020;120:109622. https://doi.org/10.1016/j.rser.2019.109622.</mixed-citation></citation-alternatives></ref><ref id="cit11"><label>11</label><citation-alternatives><mixed-citation xml:lang="ru">Давыдов С.Ю., Посредник О.В. Особенности фактора термоэлектрической мощности капсулированных структур, образованных двумерными слоями // Физика твердого тела. 2023. Т. 65, № 4. С. 652-655. https://doi.org/10.21883/FTT.2023.04.55305.15.</mixed-citation><mixed-citation xml:lang="en">Davydov S.Yu., Posrednik O.V. Features of the thermoelectric power factor of encapsulated structures formed by two-dimensional layers. Fizika tverdogo tela = Solid State Physics. 2023;65(4):652-655. (In Russ.) https://doi.org/10.21883/FTT.2023.04.55305.15.</mixed-citation></citation-alternatives></ref><ref id="cit12"><label>12</label><citation-alternatives><mixed-citation xml:lang="ru">Tuning thermoelectric properties of graphene/boron nitride heterostructures / L.A. Algharagholy, Q. Al-Galiby, H.A. Marhoon, H. Sadeghi, H.M. Abduljalil, C.J. Lambert // Nanotechnology. 2015. Vol. 26. P. 475401. https://doi.org/10.1088/0957-4484/26/47/475401.</mixed-citation><mixed-citation xml:lang="en">Algharagholy L.A., Al-Galiby Q., Marhoon H.A., Sadeghi H., Abduljalil H.M., Lambert C.J. Tuning thermoelectric properties of graphene/boron nitride heterostructures. Nanotechnology. 2015;26:475401. https://doi.org/10.1088/0957-4484/26/47/475401.</mixed-citation></citation-alternatives></ref><ref id="cit13"><label>13</label><citation-alternatives><mixed-citation xml:lang="ru">Enhanced thermoelectric properties of Bi2Te2.7Se0.3/hexagonal BN composites and optimized modules for power generation / J. Guo, Q. Ma, K. Luo, W. Qiu, H. Chen, P. Qian [et al.] // Ceramics international. 2024. Vol. 50, no. 9. P. 15209-15217. https://doi.org/10.1016/j.ceramint.2024.01.440.</mixed-citation><mixed-citation xml:lang="en">Guo J., Ma Q., Luo K., Qiu W., Chen H., Qian P., et al. Enhanced thermoelectric properties of Bi2Te2.7Se0.3/hexagonal BN composites and optimized modules for power generation. Ceramics international. 2024;50(9):15209-15217. https://doi.org/10.1016/j.ceramint.2024.01.440.</mixed-citation></citation-alternatives></ref><ref id="cit14"><label>14</label><citation-alternatives><mixed-citation xml:lang="ru">Tran V.-T., Saint-Martin J., Dollfus P. High thermoelectric performance in graphene nanoribbons by graphene/BN interface engineering // Nanotechnology. 2015. Vol. 26, no. 49. P. 495202. https://doi.org/10.1088/0957-4484/26/49/495202.</mixed-citation><mixed-citation xml:lang="en">Tran V.-T., Saint-Martin J., Dollfus P. High thermoelectric performance in graphene nanoribbons by graphene/BN interface engineering. Nanotechnology. 2015;26(49):495202. https://doi.org/10.1088/0957-4484/26/49/495202.</mixed-citation></citation-alternatives></ref><ref id="cit15"><label>15</label><citation-alternatives><mixed-citation xml:lang="ru">Impact of Boron nitride on the thermoelectric properties and service stability of Cu2-xSe / Z. Lin, Y. Guo, J. Bai, A. Hong, C. Li, Y. Wu [et al.] // ACS Applied materials &amp; interfaces. 2024. Vol. 17, no. 1. P. 1922-1930. https://doi.org/10.1021/acsami.4c16857.</mixed-citation><mixed-citation xml:lang="en">Lin Z., Guo Y., Bai J., Hong A., Li C., Wu Y., et al. Impact of Boron nitride on the thermoelectric properties and service stability of Cu2-xSe. ACS Applied materials &amp; interfaces. 2024;17(1):1922-1930. https://doi.org/10.1021/acsami.4c16857.</mixed-citation></citation-alternatives></ref><ref id="cit16"><label>16</label><citation-alternatives><mixed-citation xml:lang="ru">Synthesis and characterization of Boron carbon nitride films by radio frequency magnetron sputtering / Z.F. Zhou, I. Bello, M.K. Lei, K.Y. Li, C.S. Lee, S.T. Lee // Surface and coatings technology. 2000. Vol. 128-129, no. 1. P. 334-340. https://doi.org/10.1016/S0257-8972(00)00600-9.</mixed-citation><mixed-citation xml:lang="en">Zhou Z.F., Bello I., Lei M.K., Li K.Y., Lee C.S., Lee S.T. Synthesis and characterization of Boron carbon nitride films by radio frequency magnetron sputtering. Surface and coatings technology. 2000;128-129(1):334-340. https://doi.org/10.1016/S0257-8972(00)00600-9.</mixed-citation></citation-alternatives></ref><ref id="cit17"><label>17</label><citation-alternatives><mixed-citation xml:lang="ru">Growth mechanisms of hBN crystalline nanostructures with rf sputtering deposition: challenges, opportunities, and future perspectives / D.-Q. Hoang, N.-H. Vu, T.-Q. Nguyen, T.-D. Hoang [et al.] // Physica scripta. 2023. Vol. 98, no. 4. P.042001. https://doi.org/10.1088/1402-4896/acbe7b.</mixed-citation><mixed-citation xml:lang="en">Hoang D.-Q., Vu N.-H., Nguyen T.-Q., Hoang T.-D., Cao X.-H., Pham D.-K. Growth mechanisms of hBN crystalline nanostructures with rf sputtering deposition: challenges, opportunities, and future perspectives. Physica scripta. 2023;98(4):042001. https://doi.org/10.1088/1402-4896/acbe7b.</mixed-citation></citation-alternatives></ref><ref id="cit18"><label>18</label><citation-alternatives><mixed-citation xml:lang="ru">Размерные особенности и механизмы роста магнетронных наноплёнок нитрида тантала при высокочастотном реактивном формировании / А.П. Кузьменко, И.С. Кашкин, А.И. Колпаков, И.С. Сапрыкин // Известия Юго-Западного государственного университета. Серия: Техника и технологии. 2025. Т. 15, № 4. С. 65-81. https://doi.org/10.21869/2223-1528-2025-15-4-65-81.</mixed-citation><mixed-citation xml:lang="en">Kuzmenko A.P., Kashkin I.S., Kolpakov A.I., Saprykin I.S. Dimensional features and mechanisms of growth of magnetron nanofilms of Tantalum nitride during high-frequency reactive formation. Izvestiya Yugo-Zapadnogo gosudarstvennogo universiteta. Seriya: Tekhnika i tekhnologii = Proceedings of the Southwest State University. Series: Engineering and Technologies. 2025;15(4):65-81. (In Russ.) https://doi.org/10.21869/2223-1528-2025-15-4-65-81.</mixed-citation></citation-alternatives></ref><ref id="cit19"><label>19</label><citation-alternatives><mixed-citation xml:lang="ru">Perottoni C.A., Zorzi J.E. Thermal expansion of hexagonal Boron nitride / // Physica status solidi (b). 2024. Vol. 262, no. 2. P. 2400409. https://doi.org/10.1002/pssb.202400409.</mixed-citation><mixed-citation xml:lang="en">Perottoni C.A., Zorzi J.E. Thermal expansion of hexagonal boron nitride. Physica status solidi (b). 2024;262(2):2400409. https://doi.org/10.1002/pssb.202400409.</mixed-citation></citation-alternatives></ref><ref id="cit20"><label>20</label><citation-alternatives><mixed-citation xml:lang="ru">Unidirectional domain growth of hexagonal Boron nitride thin films / A. Biswas, Q. Ruan, F. Lee, C. Li, S.A. Iyengar, A.B. Puthirath [et al.] // Applied materials today. 2023. Vol. 30. P. 101734. https://doi.org/10.1016/j.apmt.2023.101734.</mixed-citation><mixed-citation xml:lang="en">Biswas A., Ruan Q., Lee F., Li C., Iyengar S.A., Puthirath A.B. Unidirectional domain growth of hexagonal Boron nitride thin films. Applied materials today. 2023;30:101734. https://doi.org/10.1016/j.apmt.2023.101734.</mixed-citation></citation-alternatives></ref><ref id="cit21"><label>21</label><citation-alternatives><mixed-citation xml:lang="ru">Oriented lateral growth of two-dimensional materials on c-plane sapphire / J.-H. Fu, J. Min, C.-K. Chang, C.-C. Tseng, Q. Wang, H. Sugisaki [et al.] // Nature nanotechnology. 2023. Vol. 18. P. 1289-1294. https://doi.org/10.1038/s41565-023-01445-9.</mixed-citation><mixed-citation xml:lang="en">Fu J.-H., Min J., Chang C.-K., Tseng C.-C., Wang Q., Sugisaki H., et al. Oriented lateral growth of two-dimensional materials on c-plane sapphire. Nature nanotechnology. 2023;18:1289-1294. https://doi.org/10.1038/s41565-023-01445-9.</mixed-citation></citation-alternatives></ref><ref id="cit22"><label>22</label><citation-alternatives><mixed-citation xml:lang="ru">Haque A., Narayan J. Conversion of h-BN into c-BN for tuning optoelectronic properties // Materials Advances. 2020. Vol. 1. P. 830-836. https://doi.org/10.1039/D0MA00008F.</mixed-citation><mixed-citation xml:lang="en">Haque A., Narayan J. Conversion of h-BN into c-BN for tuning optoelectronic properties. Materials Advances. 2020;1:830-836. https://doi.org/10.1039/D0MA00008F.</mixed-citation></citation-alternatives></ref><ref id="cit23"><label>23</label><citation-alternatives><mixed-citation xml:lang="ru">Strain induced bandgap engineering in wafer-scale hexagonal Boron nitride thick epitaxial films for broadband solar-blind ultraviolet detection / R. An, X. Fang, W. Yao, D. Zhao, Zhongyuan Han, Z. Long [et al.] // Advanced Optical Material. 2026. Vol. 14, is. 25. P. e71362. https://doi.org/10.1002/adom.71362.</mixed-citation><mixed-citation xml:lang="en">An R., Fang X., Yao W., Zhao D., Han Z., Long Z. Strain induced bandgap engineering in wafer-scale hexagonal Boron nitride thick epitaxial films for broadband solar-blind Ultraviolet detection. Advanced Optical Material. 2026:14(25):e71362. https://doi.org/10.1002/adom.71362.</mixed-citation></citation-alternatives></ref><ref id="cit24"><label>24</label><citation-alternatives><mixed-citation xml:lang="ru">Amorphous Boron nitride: synthesis, properties and device application / S.M. Sattari-Esfahlan, M. Saeed, J.J. Mukkath, M. Ji-Yun, H. Sang-Hwa, J. Houk [et al.] // Nano convergence. 2025. Vol. 12. P. 22. https://doi.org/10.1186/s40580-025-00486-1.</mixed-citation><mixed-citation xml:lang="en">Sattari-Esfahlan S.M., Saeed M., Mukkath J.J., Ji-Yun M., Sang-Hwa H., Houk J., et al. Amorphous boron nitride: synthesis, properties and device application. Nano convergence. 2025;12:22. https://doi.org/10.1186/s40580-025-00486-1.</mixed-citation></citation-alternatives></ref><ref id="cit25"><label>25</label><citation-alternatives><mixed-citation xml:lang="ru">Quantum espresso: a modular and open-source software project for quantum simulations of materials / P. Giannozzi, S. Baroni, N. Bonini, M. Calandra, R. Car, C. Cavazzoni [et al.] // Journal of physics: condensed matter. 2009. Vol. 21, no. 39. P. 395502. https://doi.org/10.1088/0953-8984/21/39/395502.</mixed-citation><mixed-citation xml:lang="en">Giannozzi P., Baroni S., Bonini N., Calandra M., Car R., Cavazzoni C., et al. Quantum espresso: a modular and open-source software project for quantum simulations of materials. Journal of physics: condensed matter. 2009;21(39):395502. https://doi.org/10.1088/0953-8984/21/39/395502.</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
