techusguИзвестия Юго-Западного государственного университета. Серия: Техника и технологииProceedings of the Southwest State University. Series: Engineering and Technology2223-1528Юго-Западный государственный университет10.21869/2223-1528-2025-15-4-65-81techusgu-369Research ArticleФИЗИКАPHYSICSРазмерные особенности и механизмы роста магнетронных наноплёнок нитрида тантала при высокочастотном реактивном формированииDimensional features and mechanisms of growth of magnetron nanofilms of Tantalum nitride during high-frequency reactive formationhttps://orcid.org/0000-0001-7089-0692КузьменкоА. П.KuzmenkoA. P.

Кузьменко Александр Павлович, доктор физико-математических наук, профессор, главный научный сотрудник Регионального центра нанотехнологий

Aleksander P. Kuzmenko, Doctor of Science (Physics and Mathematics), Professor, Chief Researcher of the Regional Center of Nanotechnology

apk3527@mail.ruhttps://orcid.org/0009-0009-7513-6352КашкинИ. С.KashkinI. S.

Кашкин Игорь Сергеевич, аспирант

Igor S. Kashkin, Postgraduate Student

igor.kashkin2016@yandex.ruhttps://orcid.org/0009-0004-8571-8544КолпаковА. И.KolpakovA. I.

Колпаков Артём Игоревич, аспирант

Artem I. Kolpakov, Postgraduate Student

artem.kolpakov.96@mail.ruСапрыкинИ. С.SaprykinI. S.

Сапрыкин Иван Сергеевич, студент кафедры нанотехнологий, микроэлектроники, общей и прикладной физики

Ivan S. Saprykin, Student of the Department of Nanotechnology, Microelectronics, General and Applied Physics

ivan.saprykin.04@mail.ruЮго-Западный государственный университетРоссияSouthwest State UniversityRussian Federation2025150120261546581Copyright © Кузьменко А.П., Кашкин И.С., Колпаков А.И., Сапрыкин И.С., 20262026Кузьменко А.П., Кашкин И.С., Колпаков А.И., Сапрыкин И.С.Kuzmenko A.P., Kashkin I.S., Kolpakov A.I., Saprykin I.S.Данная работа распространяется под лицензией Creative Commons Attribution 4.0.This work is licensed under a Creative Commons Attribution 4.0 License.https://techusgu.elpub.ru/jour/article/view/369

Цель исследования. Наноструктурирование в магнетронных наноплёнках нитрида тантала при высокочастотном магнетронном распылении.Методы. Высокочастотное магнетронное распыление на кремниевую подложку осуществлялось в зависимости от изменения управляющего параметра времени t = 1800 – 3600 c. Использовалась мишень из тантала, распыляемая при фиксированных T = 140°C, P = 300 Вт, давлении Ar 1,0 Па. Поверхности подложек подвергались ионной чистке в течение 120 с током 60 мА. Рост толщины пленок достигался изменением управляющего параметра времени t. Наноразмерная характеризация полученных нанопленок нитрида тантала проводилась с помощью методов атомно-силовой микроскопии, цифровой голографической микроскопии и рентгенофазового анализа. По результатам статистической обработки АСМ-изображений выполнялся анализ автокорреляционных функций и изменений фрактальных размерностей, определенных по методу кубов.Результаты. Прецизионно методом ступеньки на АСМ и ЦГМ изображениях измерены толщины и рассчитаны скорости роста нанопленок, доказано их линейное увеличение в зависимости от времени t. По данным РФА установлено формирование гексагональной hex-Ta2N фазы в тонких слоях и переход к доминированию кубической fcc-TaN с ростом толщины. Наблюдались эволюционные процессы морфологии поверхности с переходом от изотропной мелкозернистой структуры к выраженной столбчатой, что подтверждено снижением фрактальной размерности и увеличением длин автокорреляционной функции.Заключение. В магнетронных нанопленках из нитрида тантала, осажденных высокочастотным методом, обнаружен фазовый переход от гексагональной фазы hex-Ta2N в тонких слоях к кубической фазе fcc-TaN, начиная с критической толщины. Снижение фрактальной размерности и увеличение длин автокорреляционной функции указывали на эволюцию морфологии поверхности от изотропно мелкозернистой к выраженно столбчатой.

Purpose of research. Nanostructuring in magnetron nanofilms of Tantalum nitride by high-frequency magnetron sputtering.Methods. High–frequency magnetron sputtering on a silicon substrate was carried out depending on the change in the time control parameter t = 1800 - 3600 C. A Tantalum target sprayed at a fixed T = 140°C, P = 300 W, pressure Ar 1.0 Pa was used. The surfaces of the substrates were ion-cleaned for 120 s with a current of 60 mA. The increase in film thickness was achieved by changing the time control parameter t. Nanoscale characterization of the obtained tantalum nitride nanofilms was carried out using atomic force microscopy, digital holographic microscopy, and X-ray phase analysis. Based on the results of statistical AFM image processing, the analysis of autocorrelation functions and changes in fractal dimensions determined by the cube method was performed.Results. The nanofilm thicknesses were measured and the growth rates of nanofilms were calculated using the precision step method on AFM and CGM images, and their linear increase as a function of time t was proved. According to the XRD data, the formation of the hexagonal hex-Ta2N phase in thin layers and the transition to the dominance of cubic fcc-TaN with increasing thickness have been established. Evolutionary processes of surface morphology were observed with the transition from an isotropic fine-grained structure to a pronounced columnar one, which was confirmed by a decrease in fractal dimension and an increase in the lengths of the autocorrelation function.Conclusion. In magnetron nanofilms of tantalum nitride deposited by the high-frequency method, a phase transition from the hexagonal hex-Ta2N phase in thin layers to the cubic fcc-TaN phase, starting from a critical thickness, was detected. A decrease in the fractal dimension and an increase in the lengths of the autocorrelation function indicated the evolution of the surface morphology from isotropically fine-grained to pronounced columnar. 

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The authors declare that there are no conflicts of interest present.