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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">techusgu</journal-id><journal-title-group><journal-title xml:lang="ru">Известия Юго-Западного государственного университета. Серия: Техника и технологии</journal-title><trans-title-group xml:lang="en"><trans-title>Proceedings of the Southwest State University. Series: Engineering and Technology</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">2223-1528</issn><publisher><publisher-name>Юго-Западный государственный университет</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.21869/2223-1528-2023-13-2-105-116</article-id><article-id custom-type="elpub" pub-id-type="custom">techusgu-168</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>ФИЗИКА</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>PHYSICS</subject></subj-group></article-categories><title-group><article-title>Оптические свойства и зонная структура ленгмюровских пленок нитрида бора</article-title><trans-title-group xml:lang="en"><trans-title>Optical Properties and Band Structure of Boron Nitride Langmuir Films</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0009-0005-7272-2939</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Локтионова</surname><given-names>И. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Loktionova</surname><given-names>I. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Локтионова Инна Владимировна, кандидатфизико-математических наук, старший научный сотрудник Регионального центра нанотехнологий</p><p>ул. 50 лет Октября, д. 94, г. Курск 305040, Российская Федерация </p></bio><bio xml:lang="en"><p>Inna V. Loktionova, Candidate of Sciences (Physics and Mathematics), Senior Researcher of the Regional Center for Nanotechnology </p><p> 50 Let Oktyabrya Str. 94, Kursk 305040, Russian Federation </p></bio><email xlink:type="simple">ms.chuhaeva@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-7089-0692</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Кузьменко</surname><given-names>А. П.</given-names></name><name name-style="western" xml:lang="en"><surname>Kuzmenko</surname><given-names>A. P.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Кузьменко Александр Павлович, доктор физико-математических наук, профессор, главный научный сотрудник Регионального центра нанотехнологий</p><p>ул. 50 лет Октября, д. 94, г. Курск 305040, Российская Федерация </p></bio><bio xml:lang="en"><p>Alexander P. Kuzmenko, Doctor of Sciences (Physics and Mathematics), Professor, Chief Researcher of the Regional Center for Nanotechnology </p><p> 50 Let Oktyabrya Str. 94, Kursk 305040, Russian Federation </p></bio><email xlink:type="simple">apk3527@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-5635-8149</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Жакин</surname><given-names>А. И.</given-names></name><name name-style="western" xml:lang="en"><surname>Zhakin</surname><given-names>A. I.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Жакин Анатолий Иванович, доктор  физико-математических наук, профессор кафедры нанотехнологий, микроэлектроники, общей и прикладной физики</p><p>ул. 50 лет Октября, д. 94, г. Курск 305040, Российская Федерация </p></bio><bio xml:lang="en"><p>Anatoly I. Zhakin, Doctor of Sciences (Physics and Mathematics), Professor of the Department of Nanotechnology, Microelectronics, General and Applied Physics </p><p> 50 Let Oktyabrya Str. 94, Kursk 305040, Russian Federation </p></bio><email xlink:type="simple">zhakin@mail.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Емельянов</surname><given-names>В. М.</given-names></name><name name-style="western" xml:lang="en"><surname>Yemelyanov</surname><given-names>V. M.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Емельянов Виктор Михайлович, доктор технических наук, профессор, главный научный сотрудник</p><p>ул. 50 лет Октября, д. 94, г. Курск 305040, Российская Федерация </p></bio><bio xml:lang="en"><p>Victor M. Emelaynov, Doctor of Sciences (Physics and Mathematics), Professor, Chief Researcher </p><p> 50 Let Oktyabrya Str. 94, Kursk 305040, Russian Federation </p></bio><email xlink:type="simple">vmemelianov@yandex.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-8110-9929</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Сизов</surname><given-names>А. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Sizov</surname><given-names>A. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Сизов Александр Семёнович, доктор технических наук, помощник проректора по научно-исследовательской работе и международнымсвязям; профессор кафедры информационных систем и технологий</p><p>ул. 50 лет Октября, д. 94, г. Курск 305040, Российская Федерация </p><p>ул. Радищева, д. 33, г. Курск 305000, Российская Федерация </p></bio><bio xml:lang="en"><p>Alexander S. Sizov, Doctor of Sciences (Physics and Mathematics), Assistant Vice Rector for Scientific Research and International Relations; Professor of the Department of Information Systems and Technologies </p><p> 50 Let Oktyabrya Str. 94, Kursk 305040, Russian Federation </p><p>33 Radishcheva Str., Kursk 305000, Russian Federation </p></bio><email xlink:type="simple">sizov@mail.ru</email><xref ref-type="aff" rid="aff-2"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Абакумов</surname><given-names>П. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Abakumov</surname><given-names>P. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Абакумов Павел Владимирович, кандидат физико-математических наук, старший преподаватель кафедры физики, информатики и математики</p><p>ул. К. Маркса, д. 3, г. Курск 305041, Российская Федерация </p></bio><bio xml:lang="en"><p>Pavel V. Abakumov, Candidate of Sciences (Physics and Mathematics), Senior Lecturer of the Physics, Informatics and mathematics Department </p><p>3 K. Marx Str., Kursk 305041, Russian Federation </p></bio><email xlink:type="simple">abakumovpavel18@gmail.com</email><xref ref-type="aff" rid="aff-3"/></contrib><contrib contrib-type="author" corresp="yes"><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Рышкова</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Ryshkova</surname><given-names>A. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Рышкова Анна Викторовна, кандидат педагогических наук, доцент кафедры физики, информатики и математики</p><p>ул. К. Маркса, д. 3, г. Курск 305041, Российская Федерация </p></bio><bio xml:lang="en"><p>Anna V. Ryshkova, Candidate of Sciences (Pedagogical), Associate Professor of the Physics, Informatics and mathematics Department </p><p>3 K. Marx Str., Kursk 305041, Russian Federation </p></bio><email xlink:type="simple">Ryshkovaav@kursksmu.net</email><xref ref-type="aff" rid="aff-3"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-8087-874X</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Неручев</surname><given-names>Ю. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Neruchev</surname><given-names>A. Yu.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Неручев Юрий Анатольевич, доктор физико-математических наук, профессор кафедры физики и нанотехнологий, научный руководитель научно-исследовательского центра физики конденсированного состояния</p><p>ул. Радищева, д. 33, г. Курск 305000, Российская Федерация </p></bio><bio xml:lang="en"><p>Yury A. Neruchev, Doctor of Sciences (Physics and Mathematics), Professor of the Department of Physics and Nanotechnology, Scientific Supervisor of the Research Center for Condensed Matter Physics </p><p>33 Radishcheva Str., Kursk 305000, Russian Federation </p></bio><email xlink:type="simple">yuan2003@mail.ru</email><xref ref-type="aff" rid="aff-4"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-4323-351X</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Филиппов</surname><given-names>В. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Filippov</surname><given-names>V. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Филиппов Владимир Владимирович, доктор физико-математических наук, доцент, профессор кафедры математики и физики института естественных, математических и технических наук</p><p>ул. Ленина, д. 42, г. Липецк 398020, Российская Федерация </p></bio><bio xml:lang="en"><p>Vladimir V. Filippov, Doctor of Sciences (Physics and Mathematics), Associate Professor, Professor of the Department of Mathematics and Physics of the Institute of Natural, Mathematical and Technical Sciences </p><p>42 Lenina Str., Lipetsk 398020, Russian Federation </p></bio><email xlink:type="simple">wwfilippow@mail.ru</email><xref ref-type="aff" rid="aff-5"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Юго-Западный государственный университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Southwest State University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-2"><aff xml:lang="ru"><institution>Юго-Западный государственный университет;&#13;
Курский государственный университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Southwest State University;&#13;
Kursk State University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-3"><aff xml:lang="ru"><institution>Курский государственный медицинский университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Kursk State Medical University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-4"><aff xml:lang="ru"><institution>Курский государственный университет</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Kursk State University</institution><country>Russian Federation</country></aff></aff-alternatives><aff-alternatives id="aff-5"><aff xml:lang="ru"><institution>Липецкий государственный педагогический университет им. П. П. Семенова-Тян-Шанского</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Lipetsk State Pedagogical University named after P. P. Semenov-Tyan-Shansky</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2023</year></pub-date><pub-date pub-type="epub"><day>29</day><month>09</month><year>2023</year></pub-date><volume>13</volume><issue>3</issue><fpage>105</fpage><lpage>116</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Локтионова И.В., Кузьменко А.П., Жакин А.И., Емельянов В.М., Сизов А.С., Абакумов П.В., Рышкова А.В., Неручев Ю.А., Филиппов В.В., 2023</copyright-statement><copyright-year>2023</copyright-year><copyright-holder xml:lang="ru">Локтионова И.В., Кузьменко А.П., Жакин А.И., Емельянов В.М., Сизов А.С., Абакумов П.В., Рышкова А.В., Неручев Ю.А., Филиппов В.В.</copyright-holder><copyright-holder xml:lang="en">Loktionova I.V., Kuzmenko A.P., Zhakin A.I., Yemelyanov V.M., Sizov A.S., Abakumov P.V., Ryshkova A.V., Neruchev A.Y., Filippov V.V.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://techusgu.elpub.ru/jour/article/view/168">https://techusgu.elpub.ru/jour/article/view/168</self-uri><abstract><p>Цель. Исследовать структурные особенности пленок нитрида бора, полученных методом Ленгмюра – Блоджетт и определить их зонную структуру по спектрам флуоресценции и поглощения.Методы. Осаждение ленгмюровских пленок производилось на установке KSV NIMA 2002 из коллоидного раствора ST BN/CHCl3. Изучение оптических свойств производилось на спектрфотометре СФ 2000 в спектральном диапазоне 200–1100 нм и конфокальном рамановском микроспектрометре OmegaScope Aist-NT со спектральным разрешением 3 см-1. Изучение морфологии поверхности проводилось с помощью сканирующего зондового микроскопа SmartSPM AIST-NT со стандартными кремниевыми кантилеверами NSA10 с радиусом острия иглы 7 нм. Моделирование зонной структуры стабилизированных наночастиц нитрида бора было произведено в программном пакете MaterialsStudio 2020 с модулем CASTEP.Результаты. Изучены спектральные особенности осажденных пленочных структур из стабилизированных наночастиц гексагонального нитрида бора. Оптическими методами определен гидродинамический размер наночастиц ~100 нм и латеральный размер наночастиц в ленгмюровских пленках 84,6 нм, рассчитанный по полуширине спектрального пика 1360 см-1 с симметрией E2g, и 82,4 нм – по данным сканирующей зондовой микроскопии. Получены спектры поглощения и флуоресценции коллоидных частиц с аномально большим стоксовым сдвигом 105 нм и квантовым выходом 0,72. Методом Тауца и ab-initio моделированием определена ширина запрещенной зоны стабилизированных наночастиц 5,79 и 5,46 эВ соответственно.Заключение. В работе изучены морфология поверхности, оптические свойства и зонная структура осаждаемых ленгмюровских пленок из стабилизированных наночастиц нитрида бора.</p></abstract><trans-abstract xml:lang="en"><p>Purpose. Investigate the structural features of boron nitride films obtained by the Langmuir-Blodgett method. Observe fluorescence spectra and determine the band structure of the resulting coatings using optical methods.Methods. The deposition of Langmuir films was carried out using the KSV NIMA 2002 setup from the colloidal solution of ST BN/CHCl3. The study of optical properties was conducted using the SF 2000 spectrophotometer in spectral range 200 – 1100 nm and the confocal Raman microspectrometer OmegaScope AIST-NT with spectral resolution 3 cm-1. Surface morphology investigation was performed using the scanning probe microscope SmartSPM AIST-NT with standard silicon cantilevers NSA10, tip radius 7 nm. The band structure modeling of stabilized boron nitride nanoparticles was carried out using the MaterialsStudio 2020 software package with the CASTEP module.Results. The spectral characteristics of deposited film structures made of stabilized hexagonal boron nitride nanoparticles have been investigated. The hydrodynamic size of the nanoparticles was determined to be ~100 nm using optical methods, while the lateral size of the nanoparticles in Langmuir films was found to be 84.6 nm, calculated from the spectral peak at 1360 cm-1 with E2g symmetry, and 82.4 nm based on scanning probe microscopy data. Absorption and fluorescence spectra of colloidal particles were obtained, showing an unusually large Stokes shift of 105 nm and a quantum yield of 0.72. The bandgap width of the stabilized nanoparticles was measured using the Tautz method and ab-initio modeling, resulting in values of 5.79 eV and 5.46 eV, respectively. Conclusion. The study examines the surface morphology, optical properties, and band structure of the deposited Langmuir films made of stabilized boron nitride nanoparticles.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>метод Ленгмюра – Блоджетт</kwd><kwd>гексагональный нитрид бора</kwd><kwd>пленки</kwd><kwd>флуоресценция</kwd><kwd>сканирующая зондовая микроскопия</kwd><kwd>спектрофотомерия</kwd></kwd-group><kwd-group xml:lang="en"><kwd>Langmuir-Blodgett method</kwd><kwd>hexagonal boron nitride</kwd><kwd>films</kwd><kwd>fluorescence</kwd><kwd>scanning probe microscopy</kwd><kwd>spectrophotometry</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Публикация подготовлена в рамках реализации программы стратегического академического лидерства «Приоритет-2030» (Соглашения № 075-15-2021-1155 и № 075-15-2021-1213).</funding-statement><funding-statement xml:lang="en">The publication was prepared as part of the implementation of the strategic academic leadership program "Priority 2030" (Agreements No. 075-15-2021-1155 and No. 075-15-2021-1213).</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Comprehensive characterization and analysis of hexagonal boron nitride on sapphire / Shantanu Saha, A. Rice, Amob Ghosh [et al.] // AIP Advances. 2021. Vol. 11, no. 5. Р. 055008. https://doi.org/10.1021/acs.cgd.2c00880.</mixed-citation><mixed-citation xml:lang="en">Shantanu Saha, A. Rice, Amob Ghosh, eds. Comprehensive characterization and analysis of hexagonal boron nitride on sapphire. AIP Advances, 2021, vol. 11, no. 5, pp. 055008. https://doi.org/10.1021/acs.cgd.2c00880</mixed-citation></citation-alternatives></ref><ref id="cit2"><label>2</label><citation-alternatives><mixed-citation xml:lang="ru">Epitaxy of hexagonal boron nitride thin films on sapphire for optoelectronics / Gaokai Wang, Junhua Meng, Jingren Chen [et al.] // Crystal Growth &amp; Design. 2022. Vol. 22, no. 12. Р. 7207–7214. https://doi.org/10.1021/acs.cgd.2c00880.</mixed-citation><mixed-citation xml:lang="en">Gaokai Wang, Junhua Meng, Jingren Chen, eds. Epitaxy of hexagonal boron nitride thin films on sapphire for optoelectronics. Crystal Growth &amp; Design, 2022, vol. 22, no. 12, pp. 7207–7214. https://doi.org/ 10.1021/acs.cgd.2c00880</mixed-citation></citation-alternatives></ref><ref id="cit3"><label>3</label><citation-alternatives><mixed-citation xml:lang="ru">Phonon-assisted emission and absorption of individual color centers in hexagonal boron nitride / D. Wigger, R. Schmidt, O. Del Pozo-Zamudo [et al.] // 2D Materials. 2019. Vol. 6, no. 3. Р. 035006. https://doi.org/10.1088/2053-1583/ab1188.</mixed-citation><mixed-citation xml:lang="en">Wigger D., Schmidt R., Del Pozo-Zamudo O., eds. Phonon-assisted emission and absorption of individual color centers in hexagonal boron nitride. 2D Materials, 2019, vol. 6, no. 3, pp. 035006. https://doi.org/10.1088/2053-1583/ab1188</mixed-citation></citation-alternatives></ref><ref id="cit4"><label>4</label><citation-alternatives><mixed-citation xml:lang="ru">Hexagonal boron nitride quantum dots: Properties, preparation and applications / Xiaofang Zhang, Lulu An, Changning Bai [et al.] // Materials Today Chemistry. 2021. Vol. 20. Р. 100425. https://doi.org/10.1016/j.mtchem.2021.100425.</mixed-citation><mixed-citation xml:lang="en">Xiaofang Zhang, Lulu An, Changning Bai, eds. Hexagonal boron nitride quantum dots: Properties, preparation and applications. Materials Today Chemistry, 2021, vol. 20, pp. 100425. https://doi.org/10.1016/j.mtchem.2021.100425</mixed-citation></citation-alternatives></ref><ref id="cit5"><label>5</label><citation-alternatives><mixed-citation xml:lang="ru">Ellipsometry study of hexagonal boron nitride using synchrotron radiation: transparency window in the Far‐UVC / L. Artús, M. Feneberg, C. Attaccalite[et al.] // Advanced Photonics Research. 2021. Vol. 2, no. 5. Р. 2000101. https://doi.org/10.1002/adpr.202000101.</mixed-citation><mixed-citation xml:lang="en">Artús L., Feneberg M., Attaccalite C., eds. Ellipsometry study of hexagonal boron nitride using synchrotron radiation: transparency window in the Far‐UVC. Advanced Photonics Research, 2021, vol. 2, no. 5, pp. 2000101. https://doi.org/10.1002/adpr.202000101</mixed-citation></citation-alternatives></ref><ref id="cit6"><label>6</label><citation-alternatives><mixed-citation xml:lang="ru">Direct growth of hexagonal boron nitride films on dielectric sapphire substrates by pulsed laser deposition for optoelectronic applications / Gaokai Wang, Jingren Chen, Junhua Meng [et al.] // Fundamental Research. 2021. Vol. 1, no. 6. Р. 677–683. https://doi.org/10.1016/j.fmre.2021.09.014.</mixed-citation><mixed-citation xml:lang="en">Gaokai Wang, Jingren Chen, Junhua Meng, eds. Direct growth of hexagonal boron nitride films on dielectric sapphire substrates by pulsed laser deposition for optoelectronic applications. Fundamental Research, 2021, vol. 1, no. 6, pp. 677–683. https://doi.org/10.1016/j.fmre.2021.09.014</mixed-citation></citation-alternatives></ref><ref id="cit7"><label>7</label><citation-alternatives><mixed-citation xml:lang="ru">Growth of hexagonal boron nitride films on silicon substrates by low-pressure chemical vapor deposition / Xi Chen, Chunbo Tan, Xiaohang Liu [et al.] // Journal of Materials Science: Materials in Electronics. 2021. Vol. 32. Р. 3713–3719. https://doi.org/10.1007/s10854-020-05116-6.</mixed-citation><mixed-citation xml:lang="en">Xi Chen, Chunbo Tan, Xiaohang Liu, eds. Growth of hexagonal boron nitride films on silicon substrates by low-pressure chemical vapor deposition. Journal of Materials Science: Materials in Electronics, vol. 32, pp. 3713–3719. https://doi.org/10.1007/s10854-020-05116-6</mixed-citation></citation-alternatives></ref><ref id="cit8"><label>8</label><citation-alternatives><mixed-citation xml:lang="ru">Karim M., Lopes J. M., Ramsteiner M. The impact of ultraviolet laser excitation during Raman spectroscopy of hexagonal boron nitride thin films // Journal of Raman Spectroscopy. 2020. Vol. 51, no. 12. Р. 2468–2477. https://doi.org/10.1002/jrs.6007.</mixed-citation><mixed-citation xml:lang="en">Karim M., Lopes J. M., Ramsteiner M. The impact of ultraviolet laser excitation during Raman spectroscopy of hexagonal boron nitride thin films. Journal of Raman Spectroscopy, 2020, vol. 51, no. 12. pp. 2468–2477. https://doi.org/10.1002/jrs.6007</mixed-citation></citation-alternatives></ref><ref id="cit9"><label>9</label><citation-alternatives><mixed-citation xml:lang="ru">Synthesis of hexagonal boron nitride films on silicon and sapphire substrates by low-pressure chemical vapor deposition / R. Singhal, E. Echeverria, D. N. Mcilroy [et al.] // Thin Solid Films. 2021. Vol. 733. Р. 138812. https://doi.org/10.1016/j.tsf.2021.138812.</mixed-citation><mixed-citation xml:lang="en">Singhal R., Echeverria E., Mcilroy D. N., eds. Synthesis of hexagonal boron nitride films on silicon and sapphire substrates by low-pressure chemical vapor deposition. Thin Solid Films, 2021, vol. 733, pp.138812. https://doi.org/10.1016/j.tsf.2021.138812</mixed-citation></citation-alternatives></ref><ref id="cit10"><label>10</label><citation-alternatives><mixed-citation xml:lang="ru">Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing / Seung Hee Lee, Hokyeong Jeong, Odongo Francis Ngome Okello [et al.] // Scientific reports. 2019. Vol. 9, no. 1. Р. 10590. https://doi.org/10.1038/s41598-019-47093-9.</mixed-citation><mixed-citation xml:lang="en">Seung Hee Lee, Hokyeong Jeong, Odongo Francis Ngome Okello, eds. Improvements in structural and optical properties of wafer-scale hexagonal boron nitride film by post-growth annealing. Scientific reports, 2019, vol. 9, no. 1, pp. 10590. https://doi.org/10.1038/s41598-019-47093-9</mixed-citation></citation-alternatives></ref><ref id="cit11"><label>11</label><citation-alternatives><mixed-citation xml:lang="ru">Ultralow-dielectric-constant amorphous boron nitride / Seokmo Hong, Chang Seok Lee, Min-Hyun Lee [et al.] // Nature. 2020. Vol. 582, no. 7813. Р. 511–514. https://doi.org/10.1038/s41586-020-2375-9.</mixed-citation><mixed-citation xml:lang="en">Seokmo Hong, Chang Seok Lee, Min-Hyun Lee, eds. Ultralow-dielectric-constant amorphous boron nitride. Nature, 2020, vol. 582, no. 7813, pp. 511–514. https://doi.org/10.1038/s41586-020-2375-9</mixed-citation></citation-alternatives></ref><ref id="cit12"><label>12</label><citation-alternatives><mixed-citation xml:lang="ru">Rapid and broad-range thickness estimation method of hexagonal boron nitride using Raman spectroscopy and optical microscope / Yeohghoon Jin, Yoonhyuk Rah, Junghoon Park [et al.] //Applied Physics Letters. 2020. Vol. 116, no. 8. Р. 081104. https://doi.org/10.1063/1.5143972.</mixed-citation><mixed-citation xml:lang="en">Yeohghoon Jin, Yoonhyuk Rah, Junghoon Park, eds. Rapid and broad-range thickness estimation method of hexagonal boron nitride using Raman spectroscopy and optical microscope. Applied Physics Letters, 2020, vol. 116, no. 8, pp. 081104. https://doi.org/10.1063/1.5143972</mixed-citation></citation-alternatives></ref><ref id="cit13"><label>13</label><citation-alternatives><mixed-citation xml:lang="ru">Emergence of fluorescence in boron nitride nanoflakes and its application in bioimaging / Vijayesh Kumar, Kumar Nikhil, Partha Roy [et al.] // RSC advances. 2016. Vol. 6, no. 53. Р. 48025–48032. https://doi.org/10.1016/j.rser.2022.112910.</mixed-citation><mixed-citation xml:lang="en">Vijayesh Kumar, Kumar Nikhil, Partha Roy, eds. Emergence of fluorescence in boron nitride nanoflakes and its application in bioimaging. RSC advances, 2016, vol. 6, no. 53, pp. 48025–48032. https://doi.org/10.1016/j.rser.2022.112910</mixed-citation></citation-alternatives></ref><ref id="cit14"><label>14</label><citation-alternatives><mixed-citation xml:lang="ru">Determination of nickel (II) via quenching of the fluorescence of boron nitride quantum dots / Qiuhong Yao, Yufeng Feng, Rong Mingcong [et al.] // Microchimica Acta. 2017. Vol. 184. Р. 4217–4223. https://doi.org/10.1016/j.mtchem.2021.100425.</mixed-citation><mixed-citation xml:lang="en">Qiuhong Yao, Yufeng Feng, Rong Mingcong, eds. Determination of nickel (II) via quenching of the fluorescence of boron nitride quantum dots. Microchimica Acta, 2017, vol. 184, pp. 4217–4223. https://doi.org/10.1016/j.mtchem.2021.100425</mixed-citation></citation-alternatives></ref><ref id="cit15"><label>15</label><citation-alternatives><mixed-citation xml:lang="ru">One‐step synthesis of boron nitride quantum dots: Simple chemistry meets delicate nanotechnology / Bingping Liu, Shihai Yan, Zhongqian Song, Mengli Liu [et al.] // Chemistry–A European Journal. 2016. Vol. 22, no. 52. Р. 18899–18907. https://doi.org/10.1016/j.mtchem.2021.100425.</mixed-citation><mixed-citation xml:lang="en">Bingping Liu, Shihai Yan, Zhongqian Song, Mengli Liu. One‐step synthesis of boron nitride quantum dots: Simple chemistry meets delicate nanotechnology. Chemistry–A European Journal, 2016, vol. 22. no. 52, pp. 18899–18907. https://doi.org/10.1016/j.mtchem.2021.100425</mixed-citation></citation-alternatives></ref><ref id="cit16"><label>16</label><citation-alternatives><mixed-citation xml:lang="ru">Controllable preparation of boron nitride quantum dots with small size and strong blue photoluminescence / Li Chen, Xiaofang Zhang, Zhao Zhao [et al.] // Colloids and Surfaces A: Physicochemical and Engineering Aspects. 2021. Vol. 614. Р. 126181. https://doi.org/10.1016/j.mtchem. 2021.100425.</mixed-citation><mixed-citation xml:lang="en">Li Chen, Xiaofang Zhang, Zhao Zhao, eds. Controllable preparation of boron nitride quantum dots with small size and strong blue photoluminescence. Colloids and Surfaces A: Physicochemical and Engineering Aspects, 2021, vol. 614, pp. 126181. https://doi.org/10.1016/j.mtchem.2021.100425</mixed-citation></citation-alternatives></ref><ref id="cit17"><label>17</label><citation-alternatives><mixed-citation xml:lang="ru">Direct measurement of quantum efficiency of single-photon emitters in hexagonal boron nitride / N. Nikolay, N. Mendelson, E. Özelci [et al.] // Optica. 2019. Vol. 6, no. 8. Р. 1084–1088. https://doi.org/10.1088/1361-6633/ab6310.</mixed-citation><mixed-citation xml:lang="en">Nikolay N., Mendelson N., Özelci E., eds. Direct measurement of quantum efficiency of singlephoton emitters in hexagonal boron nitride. Optica, 2019, vol. 6, no. 8, pp. 1084–1088. https://doi.org/10.1088/1361-6633/ab6310</mixed-citation></citation-alternatives></ref><ref id="cit18"><label>18</label><citation-alternatives><mixed-citation xml:lang="ru">Refractive index dispersion of hexagonal boron nitride in the visible and near‐infrared / SeongYeon Lee, Tae-Young Jeong, Suyong Jung [et al.] // Physica status solidi (b). 2019. Vol. 256, no. 6. Р. 1800417. https://doi.org/10.1002/pssb.201800417.</mixed-citation><mixed-citation xml:lang="en">Seong-Yeon Lee, Tae-Young Jeong, Suyong Jung, eds. Refractive index dispersion of hexagonal boron nitride in the visible and near‐infrared. Physica status solidi (b), 2019, vol. 256, no. 6, pp. 1800417. https://doi.org/10.1002/pssb.201800417</mixed-citation></citation-alternatives></ref><ref id="cit19"><label>19</label><citation-alternatives><mixed-citation xml:lang="ru">A comprehensive review on planar boron nitride nanomaterials: From 2D nanosheets towards 0D quantum dots / Shayan Angizi, Sayed Ali Ahmad Alem, Mahdi Hasanzadeh Azar [et al.] // Progress in Materials Science. 2022. Vol. 124. Р. 100884. https://doi.org/10.1016/j.pmatsci.2021.100884.</mixed-citation><mixed-citation xml:lang="en">Shayan Angizi, Sayed Ali Ahmad Alem, Mahdi Hasanzadeh Azar, eds. A comprehensive review on planar boron nitride nanomaterials: From 2D nanosheets towards 0D quantum dots. Progress in Materials Science, 2022, vol. 124, pp. 100884. https://doi.org/10.1016/j.pmatsci.2021.100884</mixed-citation></citation-alternatives></ref><ref id="cit20"><label>20</label><citation-alternatives><mixed-citation xml:lang="ru">Boron nitride for excitonics, nano photonics, and quantum technologies / B. Gil, G. Cassabois, R. Cusco [et al.] // Nanophotonics. 2020. Vol. 9, no. 11. Р. 3483–3504. https://doi.org/10.1515/nanoph-2020-0225.</mixed-citation><mixed-citation xml:lang="en">Gil B., Cassabois G., Cusco R., eds. Boron nitride for excitonics, nano photonics, and quantum technologies. Nanophotonics, 2020, vol. 9, no. 11, pp. 3483–3504. https://doi.org/10.1515/nanoph-2020-0225</mixed-citation></citation-alternatives></ref></ref-list><fn-group><fn fn-type="conflict"><p>The authors declare that there are no conflicts of interest present.</p></fn></fn-group></back></article>
